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| MITSUBISHI SEMICONDUCTOR MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Until : millimeters (inches) (1) FEATURES (TARGET) Class A operation Internally matched to 50 () system High output power P1dB=25W (TYP.) @f=3.4~3.6GHz High power gain GLP=12dB (TYP.) @f=3.4~3.6GHz High power added efficiency P.A.E.=36% (TYP.) @f=3.4~3.6GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=33.5dBm S.C.L. (2) (3) APPLICATION item 01 : 3.4~3.6GHz band power amplifier item 51 : 3.4~3.6GHz band digital radio communication QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.4A RG=25 GF-38 (1) GATE (2) Source (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 Ratings -15 -15 20 -60 126 125 175 -65 ~ +175 Unit V V A mA mA W C C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Limits Symbol IDSS gm VGS (off) P1dB GLP ID P.A.E. IM3 *2 Parameter Saturated drain current Transconductance Gate to source cut off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *3 Test conditions VDS=3V, VGS=0V VDS=3V, ID=6.4A VDS=3V, ID=120mA Min. -- -- -2 43 Typ. 18 6.5 -- 44 12 6.4 36 -45 -- Max -- -- -5 -- -- -- -- -- 1.2 Unit A S V dBm dB A % dBc C/W VDS=10V, ID (RF off)=6.4A, f=3.4-3.6GHz 11 -- -- -42 Rth (ch-c) Vf method -- *2 : item-51, 2 tone test, Po=33.5dBm Single Carrier Level, f=3.4, 3.5, 3.6GHz, f=10MHz *3 : Channel to case as of Feb.'98 MITSUBISHI ELECTRIC |
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